Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-06-16
1999-05-25
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438626, 438637, H01L 214763
Patent
active
059077883
ABSTRACT:
In a semiconductor device having an impurity diffusion layer in a surface part of a semiconductor surface and a first insulator layer formed on the semiconductor substrate and the impurity diffusion layer, the first insulator layer has a first recessed surface which defines a first contact hole. A first contact conductor plug is filled in the first contact hole. A second insulator layer is formed on the first insulator layer and a first upper plug surface of the first contact conductor plug. The second insulator layer has a second recessed surface which defines a second contact hole exposing the first upper plug surface. A second contact conductor plug is filled in the second contact hole to overlie the first upper plug surface and to be brought into contact with the second recessed surface. A conductor pad may be disposed between the first and the second contact conductor plugs.
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NEC Corporation
Picardat Kevin M.
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