Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-30
2009-10-06
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S637000, C438S672000
Reexamination Certificate
active
07598165
ABSTRACT:
A method of forming a portion of a multiplexer of a memory device includes forming a plurality of conductive plugs on a semiconductor substrate and forming first and second bit lines overlying the conductive plugs so that a pair of successively adjacent first and second bit lines is in contact with the same conductive plug.
REFERENCES:
patent: 4278989 (1981-07-01), Baba et al.
patent: 5333282 (1994-07-01), Maejima et al.
patent: 5565758 (1996-10-01), Yoeli et al.
patent: 6256227 (2001-07-01), Atsumi et al.
patent: 6429474 (2002-08-01), Gambino et al.
patent: 6665204 (2003-12-01), Takeda
Le Dung A.
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
LandOfFree
Methods for forming a multiplexer of a memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for forming a multiplexer of a memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming a multiplexer of a memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4085909