Methods for forming a multiplexer of a memory device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S622000, C438S637000, C438S672000

Reexamination Certificate

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07598165

ABSTRACT:
A method of forming a portion of a multiplexer of a memory device includes forming a plurality of conductive plugs on a semiconductor substrate and forming first and second bit lines overlying the conductive plugs so that a pair of successively adjacent first and second bit lines is in contact with the same conductive plug.

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patent: 6256227 (2001-07-01), Atsumi et al.
patent: 6429474 (2002-08-01), Gambino et al.
patent: 6665204 (2003-12-01), Takeda

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