Non-volatile multibit memory cell and method of...

Details Non-volatile multibit memory cell and method of... Non-volatile multibit memory cell and method of...

2004-12-21

2009-08-04

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S319000, C257S324000, C257S325000, C257S314000, C257SE27102, C257SE27103, C257SE29129, C257SE29309, C257SE29319

Reexamination Certificate

active

07569882

ABSTRACT:
One embodiment of the invention comprises a first semiconductor structure in electrical contact with a first contact region, a second semiconductor structure in electrical contact with a second contact region, the first semiconductor structure and the second semiconductor structure being in electrical contact with each-other along an interface, a modulating section configured to modulate the conductivity in at least one of the semiconductor structures, so that the conductivity varies along the interface, in such a way that if current flows across the interface, the current can flow only at a predetermined position along the interface, and substantially no current can flow at either side of the predetermined position.

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patent: 2004/0036128 (2004-02-01), Zhang et al.
patent: WO 01/67517 (2001-09-01), None

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