Ultra low voltage and minimum operating voltage tolerant...

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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C365S185010, C365S190000, C365S230050

Reexamination Certificate

active

07606062

ABSTRACT:
Methods and apparatus relating ultra-low voltage memory bit cells are described. In an embodiment, an ultra-low voltage memory device is provided using redundant paths to data storage nodes controlled by complementary write word lines. Other embodiments are also described.

REFERENCES:
patent: 4933899 (1990-06-01), Gibbs
patent: 5239501 (1993-08-01), Matsui et al.
patent: 7345909 (2008-03-01), Chang et al.
patent: 7471544 (2008-12-01), Nakazato et al.

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