Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-24
2009-11-17
Landau, Matthew C (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C365S072000
Reexamination Certificate
active
07619279
ABSTRACT:
A floating gate memory cell includes isolation regions between adjacent cells, and a staggered pattern of columns of cells. Word lines are formed parallel to control gate structures.
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Jones Lyle
Lindsay Roger W.
Chan Candice Y
Landau Matthew C
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
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