Three dimensional flash cell

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S315000, C365S072000

Reexamination Certificate

active

07619279

ABSTRACT:
A floating gate memory cell includes isolation regions between adjacent cells, and a staggered pattern of columns of cells. Word lines are formed parallel to control gate structures.

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patent: 6157058 (2000-12-01), Ogura
patent: 6157061 (2000-12-01), Kawata
patent: 6438028 (2002-08-01), Kobayashi et al.
patent: 2002/0028541 (2002-03-01), Lee et al.

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