Method and structure for forming strained devices

Details Method and structure for forming strained devices Method and structure for forming strained devices

2005-04-12

2009-06-09

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S371000, C257S635000, C257SE29108

Reexamination Certificate

active

07545004

ABSTRACT:
A method for manufacturing a device includes mapping extreme vertical boundary conditions of a mask layer based on vertical edges of a deposited first layer and a second layer. The mask layer is deposited over portions of the second layer based on the mapping step. The exposed area of the second layer is etched to form a smooth boundary between the first layer and the second layer. The resist layer is stripped. The resulting device is an improved PFET device and NFET device with a smooth boundary between the first and second layers such that a contact can be formed at the smooth boundary without over etching other areas of the device.

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