Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2004-06-28
2009-02-24
Olsen, Allan (Department: 1792)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S011000, C216S062000
Reexamination Certificate
active
07494593
ABSTRACT:
A method is disclosed for forming a single crystal cantilever and tip on a substrate. The method can include the operation of defining an implant area on the substrate with a layer of photoresist. A further operation can be implanting oxygen into the substrate in the implant area to a predetermined depth to form a buried oxide layer. The buried oxide layer can define a bottom of the single crystal cantilever and tip. Another operation can involve shaping the single crystal cantilever and tip from the substrate above the buried oxide layer.
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Chen Chien-Hua
Chen John
Ramamoorthi Sriram
Hewlett--Packard Development Company, L.P.
Olsen Allan
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