Method for forming a cantilever and tip

Etching a substrate: processes – Etching of semiconductor material to produce an article...

Reexamination Certificate

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C216S011000, C216S062000

Reexamination Certificate

active

07494593

ABSTRACT:
A method is disclosed for forming a single crystal cantilever and tip on a substrate. The method can include the operation of defining an implant area on the substrate with a layer of photoresist. A further operation can be implanting oxygen into the substrate in the implant area to a predetermined depth to form a buried oxide layer. The buried oxide layer can define a bottom of the single crystal cantilever and tip. Another operation can involve shaping the single crystal cantilever and tip from the substrate above the buried oxide layer.

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patent: WO 03/087709 (2003-10-01), None

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