Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2004-11-29
2009-08-18
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S157000, C438S283000, C257S059000, C257S066000
Reexamination Certificate
active
07575965
ABSTRACT:
It is conceivable that the problem that a signal is delayed by resistor of a wiring in producing a display which displays large area becomes remarkable. The present invention provides a manufacturing process using a droplet discharge method suitable for a large-sized substrate.In the present invention, after forming a base layer11(or base pretreatment) which enhances adhesiveness over a substrate in advance and forming an insulating film, a mask having a desired pattern shape is formed, and a desired depression is formed by using the mask. A metal material is filled in the depression having a mask13and a sidewall made from an insulating film by a droplet discharge method to form an embedded wiring (a gate electrode, a capacitor wiring, lead wiring or the like. Afterwards, it is flattened by a planarization processing, for example, a press or a CMP processing.
REFERENCES:
patent: 5084905 (1992-01-01), Sasaki et al.
patent: 6416583 (2002-07-01), Kitano et al.
patent: 6426595 (2002-07-01), Odake et al.
patent: 6627263 (2003-09-01), Kitano et al.
patent: 6952036 (2005-10-01), Suzuki et al.
patent: 2001/0029066 (2001-10-01), Itagaki et al.
patent: 2002/0053881 (2002-05-01), Odake et al.
patent: 2002/0136829 (2002-09-01), Kitano et al.
patent: 2004/0113161 (2004-06-01), Suzuki et al.
patent: 2005/0250262 (2005-11-01), Suzuki et al.
patent: 1 369 928 (2003-12-01), None
patent: 03-159174 (1991-07-01), None
patent: 09115433 (1997-05-01), None
patent: 2000-188251 (2000-07-01), None
patent: 2000-298446 (2000-10-01), None
patent: 2003-318193 (2003-11-01), None
patent: 2003-318401 (2003-11-01), None
patent: WO 02/067335 (2002-08-01), None
International Search Report for PCT/JP2004/018076 Dated Mar. 8, 2005.
Written Opinion of the International Searching Authority for PCT/JP2004/018076 Dated Mar. 8, 2005.
Kuwabara Hideaki
Maekawa Shinji
Nakamura Osamu
Yamazaki Shunpei
Costellia Jeffrey L.
Nixon & Peabody LLP
Pert Evan
Semiconductor Energy Laboratory Co,. Ltd.
Wilson Scott R
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