Silicon wafer having through-wafer vias

Details Silicon wafer having through-wafer vias Silicon wafer having through-wafer vias

2006-05-04

2009-06-30

Parekh, Nitin (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S700000, C257S774000, C257SE21597

Reexamination Certificate

active

07553764

ABSTRACT:
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having first and second main surfaces opposite to each other. A trench is formed in the semiconductor substrate at the first main surface. The trench extends to a first depth position in the semiconductor substrate. The trench is lined with the dielectric material. The trench is filled with a conductive material. An electrical component is electrically connected to the conductive material exposed at the first main surface. A cap is mounted to the first main surface. The cap encloses the electrical component and the electrical connection.

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