Semiconductor device made by multiple anneal of stress...

Details Semiconductor device made by multiple anneal of stress... Semiconductor device made by multiple anneal of stress...

2006-03-28

2009-08-04

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S938000, C257SE21241

Reexamination Certificate

active

07569499

ABSTRACT:
The invention provides a method of fabricating a semiconductor device. In one aspect, the method comprises forming a stress inducing layer over a semiconductor substrate, subjecting the stress inducing layer to a first temperature anneal, and subjecting the semiconductor substrate to a second temperature anneal subsequent to the first temperature anneal, wherein the second temperature anneal is higher than the first temperature anneal.

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“Stress Memorization Technique (SMT) by Selectively Strained Nitride Capping for Sub-65 nm High-Performance Strained-Si Device Application,” Symp. VLSI Technol. (C.-H. Chen, et al.), p. 56 (2004).

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