Switching-controlled power MOS electronic device

Details Switching-controlled power MOS electronic device Switching-controlled power MOS electronic device

2005-11-21

2009-08-04

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257SE29105, C257SE29112, C438S284000, C438S286000

Reexamination Certificate

active

07569883

ABSTRACT:
Power electronic MOS device of the type comprising a plurality of elementary power MOS transistors and a gate structure comprising a plurality of conductive strips realized with a first conductive material such as polysilicon, a plurality of gate fingers or metallic tracks connected to a gate pad and at least a connection layer arranged in series to at least one of said conductive strip. Such gate structure comprising at least a plurality of independent islands formed on the upper surface of the conductive strips and suitably formed on the connection layers. Said islands being realized with at least one second conductive material such as silicide.

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