Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-21
2009-12-15
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S774000, C257S344000, C257SE21167
Reexamination Certificate
active
07633126
ABSTRACT:
In view of micronizing semiconductor device and of suppressing current leakage in a shared contact allowing contact between a gate electrode and an impurity-diffused region, a semiconductor device100includes a first gate electrode108, a fourth source/drain region114b, and a shared contact electrically connecting the both, wherein in a section taken along the gate length direction, the first gate electrode108and the fourth source/drain region114bare disposed as being apart from each other, an element-isolating insulating film102is formed over the entire surface of a semiconductor substrate160exposed therebetween, and the distance between the first gate electrode108and the fourth source/drain region114bis made substantially equal to the width of the sidewall formed on the side face of the first gate electrode108, when viewed in another section taken along the gate length direction.
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Low Cost 65nm CMOS Platform for Low Power & General Purpose Applications, F. Arnaud B. Duriez et al., 2004 Symposium on VLSI Technology Digest of Technical Papers.
Lee Eugene
NEC Electronics Corporation
Young & Thompson
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