Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-27
2009-10-06
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C257SE21597
Reexamination Certificate
active
07598167
ABSTRACT:
Methods for forming through vias in a semiconductor substrate and resulting structures are disclosed. In one embodiment, a through via may be formed by forming a partial via from the active surface through a conductive element thereon and a portion of the semiconductor substrate underlying the conductive element. The through via may then be completed by laser ablation or drilling from the back surface. In another embodiment, a partial via may be formed by laser ablation or drilling from the back surface of a semiconductor substrate to a predetermined distance therein. The through via may be completed from the active surface by forming a partial via extending through the conductive element and the underlying semiconductor substrate to intersect the laser-drilled partial via. In another embodiment, a partial via may first be formed by ablation or drilling from the back surface of the semiconductor substrate followed by dry etching to complete the through via and expose the underside of the conductive element.
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Akram Salman
Farnworth Warren M.
Kirby Kyle K.
Watkins Charles M.
Wood Alan G.
Ghyka Alexander G
Micro)n Technology, Inc.
TraskBritt
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