Method of manufacturing semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S702000, C438S733000, C257SE21490, C257SE21584

Reexamination Certificate

active

07572729

ABSTRACT:
A method of manufacturing semiconductor devices, including the steps of forming an insulating layer on a semiconductor substrate in which predetermined structures are formed, and etching the insulating layer to expose a predetermined region of the semiconductor substrate, thereby forming a contact hole, forming an insulating layer on the sides of the contact hole, and forming a conductive layer within the contact hole, forming a contact plug. It is possible to prevent a short problem by sufficiently securing a distance between a drain contact plug and a virtual power line.

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patent: 10-2006-0008596 (2006-01-01), None

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