Method of forming a memory device having a storage transistor

Details Method of forming a memory device having a storage transistor Method of forming a memory device having a storage transistor

2005-01-26

2009-10-20

Phung, Anh (Department: 2824)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21320, C438S162000, C438S164000, C438S266000, C438S294000

Reexamination Certificate

active

07605028

ABSTRACT:
A memory device and a method of forming the memory device. The memory device comprises a storage transistor at a surface of a substrate comprising a body portion between first and second source/drain regions, wherein the source/drain regions are regions of a first conductivity type. The storage transistor also comprises a gate structure that wraps at least partially around the body portion in at least two spatial planes. A bit line is connected to the first source/drain region and a word line connected to the gate structure. The memory device does not require an additional capacitive storage element.

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