Method for forming contact hole of semiconductor device

Details Method for forming contact hole of semiconductor device Method for forming contact hole of semiconductor device

2006-06-15

2009-08-18

Nguyen, Thanh (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S633000, C438S636000, C438S595000, C438S303000, C257SE21495

Reexamination Certificate

active

07575997

ABSTRACT:
A method for forming a contact hole of a semiconductor is provided. Conductive patterns are formed over a substrate. An insulation layer is formed over the substrate to bury the conductive patterns. A hard mask including an amorphous carbon layer and an oxide based layer are formed in sequential order over the insulation layer and the conductive pattern. The amorphous carbon layer and the oxide layer are selectively etched to form a mask pattern. The insulation layer is etched using the mask pattern as a mask to form a contact hole.

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