Semiconductor device having non-volatile memory cell

Details Semiconductor device having non-volatile memory cell Semiconductor device having non-volatile memory cell

2005-12-19

2009-08-25

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27014

Reexamination Certificate

active

07579645

ABSTRACT:
A semiconductor device is disclosed that includes a nonvolatile memory cell having a memory transistor and a selection transistor, and a peripheral circuit transistor. The memory transistor includes a memory gate oxide film that is arranged on a semiconductor substrate, and a floating gate made of polysilicon that is arranged on the memory gate oxide film. The selection transistor is serially connected to the memory transistor and includes a selection gate oxide film that is arranged on the semiconductor substrate, and a selection gate made of polysilicon that is arranged on the selection gate oxide film. The peripheral circuit transistor includes a peripheral circuit gate oxide film that is arranged on the semiconductor substrate, and a peripheral circuit gate made of polysilicon that is arranged on the peripheral circuit gate oxide film. The memory gate oxide film is arranged to be thinner than the peripheral circuit gate oxide film.

REFERENCES:
patent: 5925907 (1999-07-01), Hazama
patent: 6282123 (2001-08-01), Mehta
patent: 7238575 (2007-07-01), Ding
patent: 2003/0203575 (2003-10-01), Hung et al.
patent: 2003/0235082 (2003-12-01), Hsu et al.
patent: 2004/0113197 (2004-06-01), Yoshida et al.
patent: 86104307 (1987-09-01), None
patent: 1405975 (2003-03-01), None
patent: 1510424 (2004-07-01), None
patent: 4-80544 (1992-03-01), None
patent: 6-85275 (1994-03-01), None
patent: 8-506693 (1996-07-01), None
patent: 9-36259 (1997-02-01), None
patent: 2003-168747 (2003-06-01), None
patent: 2003-347435 (2003-12-01), None
patent: 2004-31920 (2004-01-01), None
patent: WO94/00881 (1994-01-01), None
patent: WO03/061011 (2003-07-01), None
Oct. 31, 2008 official action in connection with a counterpart Chinese patent application No. 2005800088755 (and English translation thereof).

Affiliated with

Also associated with

Rating

Semiconductor device having non-volatile memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having non-volatile memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having non-volatile memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4074785