Semiconductor memory device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S775000, C257SE21657, C257SE21660, C257SE27097

Reexamination Certificate

active

07638827

ABSTRACT:
A semiconductor memory device capable of preventing bridge formations in a peripheral circuit region includes: a cell region; a peripheral circuit region adjacent to the cell region; and a plurality of line patterns formed in the cell region and the peripheral circuit region, wherein a spacing distance between the line patterns is at least onefold greater than a width of the line pattern.

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patent: 2000-156383 (2000-06-01), None
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