Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-10-28
2009-12-29
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S775000, C257SE21657, C257SE21660, C257SE27097
Reexamination Certificate
active
07638827
ABSTRACT:
A semiconductor memory device capable of preventing bridge formations in a peripheral circuit region includes: a cell region; a peripheral circuit region adjacent to the cell region; and a plurality of line patterns formed in the cell region and the peripheral circuit region, wherein a spacing distance between the line patterns is at least onefold greater than a width of the line pattern.
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Huynh Andy
Hynix / Semiconductor Inc.
Lowe Hauptman & Ham & Berner, LLP
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