Process for realizing an integrated electronic circuit with...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S347000, C257S351000, C257SE21571

Reexamination Certificate

active

07579254

ABSTRACT:
A process for realizing an integrated electronic circuit makes it possible to obtain transistors with p-type conduction and transistors with n-type conduction, in respective active zones having crystal orientations adapted to each conduction type. In addition, each active zone is electrically insulated from a primary substrate of the circuit, so that the entire circuit is compatible with SOI technology.

REFERENCES:
patent: 6830962 (2004-12-01), Guarini et al.
patent: 2005/0116290 (2005-06-01), de Souza et al.
patent: 2005/0202600 (2005-09-01), Yamashita
patent: 2005/0236687 (2005-10-01), Chan et al.
patent: 2005/0275018 (2005-12-01), Venkatesan et al.
patent: 2006/0017137 (2006-01-01), Iwamatsu
patent: 2006/0024931 (2006-02-01), Chan et al.
patent: 2006/0091427 (2006-05-01), Waite et al.
patent: 2006/0094169 (2006-05-01), White et al.
patent: 2006/0125013 (2006-06-01), Rim
patent: 2006/0145264 (2006-07-01), Chidambarrao et al.
patent: 2006/0292770 (2006-12-01), Wu et al.
patent: 2008/0283958 (2008-11-01), Ohnuma
patent: 2008/0303090 (2008-12-01), Ieong et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for realizing an integrated electronic circuit with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for realizing an integrated electronic circuit with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for realizing an integrated electronic circuit with... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4074478

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.