Semiconductor memory and method for fabricating the...

Details Semiconductor memory and method for fabricating the... Semiconductor memory and method for fabricating the...

2005-08-23

2009-12-22

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S908000

Reexamination Certificate

active

07635886

ABSTRACT:
A semiconductor memory is disclosed having an electrically conductive region buried in a substrate, and having an array of first and second cells. The first cells are designed as memory cells each having a selection transistor and a storage capacitor and are connected to word lines and first bit lines. The second cells are designed as switchable contacts each having a selection transistor and a resistance element and are connected to a respective one of the word lines and to a second bit line. The resistance element includes a first electrode and a second electrode, which are conductively connected to one another. The second bit line makes it possible to apply a plate voltage to the buried conductive region in low-impedance fashion via the second cells.

REFERENCES:
patent: 198 32 993 (1999-11-01), None
patent: 101 04 716 (2002-08-01), None

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