Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1992-10-27

1995-09-12

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257320, 257321, 257635, 257639, 257649, H01L 2968, H01L 2702, H01L 2934

Patent

active

054499410

ABSTRACT:
A semiconductor memory device capable of being electrically written and erased comprising a floating gate, wherein, a silicon nitride, silicon oxinitride, aluminum oxide, or silicon carbide film is incorporated between the drain region and the floating gate.

REFERENCES:
patent: 4623912 (1986-11-01), Chang et al.
patent: 4665608 (1987-05-01), Okamoto et al.
patent: 5025494 (1991-06-01), Gill et al.
patent: 5045488 (1991-09-01), Yeh
patent: 5060034 (1991-10-01), Shimizu et al.
patent: 5065220 (1991-11-01), Paterson et al.
patent: 5067108 (1991-11-01), Jeng
patent: 5079606 (1992-01-01), Yamamura et al.
patent: 5194925 (1993-03-01), Ajika et al.

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-407402