Semiconductor integrated circuit having improved protection elem

Details Semiconductor integrated circuit having improved protection elem Semiconductor integrated circuit having improved protection elem

1992-05-29

1995-09-12

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257355, 257356, 257358, 257361, H01L 2934

Patent

active

054499402

ABSTRACT:
A protective device for protecting a CMOS circuit included in an internal circuit of an IC against overvoltage applied to a power source wiring and preventing the CMOS from being latched-up by surge voltage due to external noise during a normal operation of the IC is disclosed. An N channel MOS FET and a P channel MOS FET are arranged in parallel to each other and connected between a power source wiring and a ground wiring. Gate electrodes of the N channel and the P channel MOS FETs are connected to the ground wiring and the power source wiring, respectively. Positive overvoltage or surge voltage applied to the power source wiring is relieved by breakdown of drain junctions of both the MOS FETs.

REFERENCES:
patent: 4282556 (1981-08-01), Ipri
patent: 4602267 (1986-07-01), Shirato
patent: 4893157 (1990-01-01), Miyazawa et al.
patent: 4924339 (1990-05-01), Atsumi et al.
patent: 4937639 (1990-06-01), Yao et al.
patent: 4990984 (1991-02-01), Misu
patent: 5027252 (1991-06-01), Yamamura
Patent Abstracts of Japan, vol. 10, No. 201, 15 Jul. 1986, JP-A-61-043 468.
Patent Abstracts of Japan, vol. 5, No. 44, 24 Mar. 1981, JP-A-55 166 953.

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