Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-02-16

2009-02-03

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29160

Reexamination Certificate

active

07485936

ABSTRACT:
It is possible to provide a semiconductor device including a CMOS device having a gate electrode, in which the variation in threshold voltage is little. There are a p-channel MIS transistor and a n-channel MIS transistor which are provided in a semiconductor substrate, and in a region of a gate electrode of the p-channel MIS transistor at least 1 nm or less apart from the interface with a gate insulating film, the oxygen concentration is 1020cm−3or more and 1022cm−3or less.

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Lin et al., “An Adjustable Work Function Technology Using Mo Gate for CMOS Devices”, IEEE Electron Device Letters, vol. 23, No. 1, pp. 49-51, (2002).
Aoyama et al., “Process Integration Issues on Mo-Metal-Gated MOSFETs with HfO2High-k Gate Dielectrics”, Japanese Journal of Applied Physics, vol. 44, No. 4B, pp. 2283-2287, (2005).

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