Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-02-16
2009-06-09
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S166000, C257S347000, C257SE21087
Reexamination Certificate
active
07544584
ABSTRACT:
One aspect of the present subject matter relates to a method for forming strained semiconductor film. According to an embodiment of the method, a crystalline semiconductor bridge is formed over a substrate. The bridge has a first portion bonded to the substrate, a second portion bonded to the substrate, and a middle portion between the first and second portions separated from the substrate. The middle portion of the bridge is bonded to the substrate to provide a compressed crystalline semiconductor layer on the substrate. Other aspects are provided herein.
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Micro)n Technology, Inc.
Sarkar Asok K
Schwegman Lundberg & Woessner, P.A.
Slutsker Julia
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