Semiconductor structure and method of forming the same

Details Semiconductor structure and method of forming the same Semiconductor structure and method of forming the same

2007-07-11

2009-12-29

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S630000, C438S650000, C257S755000, C257S762000, C257SE23162

Reexamination Certificate

active

07638428

ABSTRACT:
A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising a layer of a dielectric material. A recess is provided in the layer of dielectric material. The recess is filled with a material comprising silver.

REFERENCES:
patent: 5656542 (1997-08-01), Miyata et al.
patent: 6016012 (2000-01-01), Chatila et al.
patent: 6624513 (2003-09-01), Iwasaki et al.
patent: 2003/0111729 (2003-06-01), Leu et al.
patent: 2004/0248409 (2004-12-01), Padhi et al.
patent: 2006/0030143 (2006-02-01), Ivanov
patent: 2007/0108616 (2007-05-01), Nakagawa et al.
patent: 2007/0148952 (2007-06-01), O'Brien et al.
patent: 43 09 542 (1997-10-01), None
patent: 0 226 385 (1986-02-01), None
patent: 2 782 839 (1999-03-01), None
patent: WO 2006/020565 (2006-02-01), None
Wolf and Tauber, Silicon Processing for the VLSI Era, vol. 1—Process Technology, 2nd Edition, 10.3.4 Electrical Activation and Implantation Damage Annealing and 15.5 Chemical Mechanical Polishing, 2000, pp. 393-398 and 742-744.
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2006 056 620.3-33 dated Jul. 26, 2007.
Bhagat et al., “Tungsten-titanium diffusion barriers for silver metallization,”Thin Solid Films,515:1998-2002, 2006.
Kessler and Winogradoff, “Improved Ohmic Contacts for Semi-Conductive Devices,” IBM Technical Disclosure Bulletin, vol. 7, p. 166, 1964.
Translation of official action from German Patent Application No. 10 2006 056 620.3 dated Oct. 28, 2008.
PCT Search Report and Written Opinion from PCT/US2007/024564 dated Apr. 1, 2008.

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