Method for fabricating semiconductor device with gate

Details Method for fabricating semiconductor device with gate Method for fabricating semiconductor device with gate

2006-02-23

2009-10-20

Deo, Duy-Vu N (Department: 1792)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S593000, C438S594000, C438S714000, C438S720000, C438S721000

Reexamination Certificate

active

07605069

ABSTRACT:
A method for fabricating a semiconductor device with a gate is provided. The method includes: forming a gate insulation layer over a substrate; sequentially forming a polysilicon layer, a silicide layer and a hard mask layer over the gate insulation layer; selectively patterning the hard mask layer; etching the silicide layer using the patterned hard mask layer as a mask such that the silicide layer has a cross-sectional etch profile that is negatively sloped; etching the polysilicon layer using the patterned hard mask layer as a mask to form a gate; and performing a light oxidation process to oxidize exposed sidewalls of the polysilicon layer and the silicide layer.

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