Method of fabricating trench isolation of semiconductor device

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material

Reexamination Certificate

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C438S435000, C438S436000, C438S424000, C257SE21540

Reexamination Certificate

active

07608519

ABSTRACT:
In a method of fabricating a trench isolation structure of a semiconductor device, excellent gap filling properties are attained, without the generation of defects. In one aspect, the method comprises: loading a substrate with a trench formed therein into a high-density plasma (HDP) chemical vapor deposition apparatus; primarily heating the substrate; applying a first bias power to the apparatus so as to form an HDP oxide liner on side wall and bottom surfaces of the trench, a gap remaining in the trench following formation of the HDP oxide liner; removing the application of the first bias power and secondarily heating the substrate; applying a second bias power at a power level that is greater than that of the first bias power to the substrate so as to form an HDP oxide film to fill the gap in the trench; and unloading the substrate from the apparatus.

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Chinese Office Action dated Apr. 3, 2009, issued in corresponding Chinese Application No. 200610151568.9 and English translation.

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