Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-08-03
2009-10-27
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S435000, C438S436000, C438S424000, C257SE21540
Reexamination Certificate
active
07608519
ABSTRACT:
In a method of fabricating a trench isolation structure of a semiconductor device, excellent gap filling properties are attained, without the generation of defects. In one aspect, the method comprises: loading a substrate with a trench formed therein into a high-density plasma (HDP) chemical vapor deposition apparatus; primarily heating the substrate; applying a first bias power to the apparatus so as to form an HDP oxide liner on side wall and bottom surfaces of the trench, a gap remaining in the trench following formation of the HDP oxide liner; removing the application of the first bias power and secondarily heating the substrate; applying a second bias power at a power level that is greater than that of the first bias power to the substrate so as to form an HDP oxide film to fill the gap in the trench; and unloading the substrate from the apparatus.
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Chinese Office Action dated Apr. 3, 2009, issued in corresponding Chinese Application No. 200610151568.9 and English translation.
Jeong Yong-kuk
Shin Dong-suk
Mills & Onello LLP
Novacek Christy L
Samsung Electronics Co,. Ltd.
Smith Zandra
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