Semiconductor device and manufacturing method therefor

Details Semiconductor device and manufacturing method therefor Semiconductor device and manufacturing method therefor

2005-05-26

2009-08-11

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S388000, C257S412000

Reexamination Certificate

active

07573106

ABSTRACT:
A method of manufacturing a semiconductor device comprises forming a gate insulation film on a semiconductor substrate; forming a first gate electrode and a second gate electrode on the gate insulation film, the area of the second gate electrode on the surface of the semiconductor substrate being larger than that of the first gate electrode; selectively etching or grinding an upper part of the second gate electrode so that the thickness of the second gate electrode becomes smaller than the thickness of the first gate electrode; depositing a metal film on the first gate electrode and the second gate electrode; and siliciding the whole of the first gate electrode and the whole of the second gate electrode.

REFERENCES:
patent: 6512258 (2003-01-01), Maeda
patent: 6562718 (2003-05-01), Xiang et al.
patent: 6905922 (2005-06-01), Lin et al.
patent: 7067881 (2006-06-01), Matsumoto et al.
patent: 2003/0160198 (2003-08-01), Wieczorek et al.
patent: 2003/0207555 (2003-11-01), Takayanagi et al.
patent: 2005/0017310 (2005-01-01), Granneman et al.
patent: 2005/0037558 (2005-02-01), Gong et al.
patent: 2005/0130366 (2005-06-01), Lu
patent: 2005/0199963 (2005-09-01), Aoyama
patent: 2006/0022280 (2006-02-01), Cabral et al.
patent: 2007/0057331 (2007-03-01), Satou et al.
patent: 2008/0308877 (2008-12-01), Kinoshita et al.
patent: 2000-058822 (2000-02-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4072818