Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-12
2009-08-04
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S391000, C257S392000, C257S499000, C257SE27001
Reexamination Certificate
active
07569899
ABSTRACT:
Logic LSI includes first power domains PD1to PD4,thick-film power switches SW1to SW4,and power switch controllers PSWC1to PSWC4.The thick-film power switches are formed by thick-film power transistors manufactured in a process common to external input/output circuits I/O. The first power domains include second power domains SPD11to SPD42including logic blocks, control circuit blocks SCB1to SCB4,and thin-film power switches SWN11to SWN42that are connected to the thick-film power switches via virtual ground lines VSSM1to VSSM4,and formed by thin-film power transistors manufactured in a process common to the logic blocks. In this way, power switches having different thickness of gate insulating films from one another are vertically stacked so as to be in a hierarchical structure, and each power switch is individually controlled by a power switch controller and a control circuit block correspondingly to each mode.
REFERENCES:
patent: 5408144 (1995-04-01), Sakata et al.
patent: 7145383 (2006-12-01), Mizuno et al.
patent: 2004/0151050 (2004-08-01), Ooishi
patent: 2008/0283986 (2008-11-01), Hirata
patent: 06-203558 (1994-07-01), None
patent: 2004-235470 (2004-08-01), None
Kanno et al., “Hierarchical Power Distribution with 20 Power Domains in 90-nm Low-Power Multi-CPU Processor”, ISSCC Dig. Tech. Papers, pp. 540-541, 671, Feb. 2006.
Kanno Yusuke
Yoshizumi Kenichi
Mandala Victor A
Miles & Stockbridge P.C.
Renesas Technology Corp.
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