Etchant and method for fabricating liquid crystal display...

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C438S754000, C216S083000, C216S084000, C216S100000, C216S101000, C216S105000

Reexamination Certificate

active

07608547

ABSTRACT:
Provided are an etchant used for a transparent conductive oxide layer and a method for fabricating a liquid crystal display (LCD) using the etchant. The etchant includes 2-5 wt % sulfuric acid, 0.02-10 wt % hydrogen sulfate of alkali metal, and deionized water as the remainder.

REFERENCES:
patent: 6632115 (2003-10-01), Tsujimura et al.
patent: 6818142 (2004-11-01), Tufano et al.
patent: 7229569 (2007-06-01), Seki et al.
patent: 7329365 (2008-02-01), Cho et al.
patent: 1465746 (2004-01-01), None
patent: 10-178177 (1998-06-01), None
patent: 2000-8184 (2000-01-01), None
patent: 2004/089717 (2004-10-01), None
Patent Abstracts of Japan, Publication No. 10-178177, Jun. 30, 1998, 1 p.
Patent Abstracts of Japan, Publication No. 2000-008184, Jan. 11, 2000, 1 p.
CN Office Action of Mar. 13, 2009 for Application No. 200610099011.5.

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