Integration of a variable thickness copper seed layer in...

Details Integration of a variable thickness copper seed layer in... Integration of a variable thickness copper seed layer in...

2006-09-29

2009-10-20

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S686000, C257SE21479, C257SE21478

Reexamination Certificate

active

07605078

ABSTRACT:
A method for forming a variable thickness Cu seed layer on a substrate for a subsequent Cu electrochemical plating process, where the Cu seed layer thickness profile improves uniformity of the electroplated Cu layer compared to when using a constant thickness Cu seed layer. The method includes depositing a Ru metal layer on the substrate, depositing a variable thickness Cu seed layer on the Ru metal layer by a physical vapor deposition process, whereby the variable thickness Cu seed layer is deposited with a Cu thickness at the edge of the substrate that is less than a Cu thickness at the center of the substrate, and plating bulk Cu onto the variable thickness Cu seed layer. The Ru metal layer may be a variable thickness Ru metal layer, or alternately, the Ru metal layer may have a substantially uniform Ru metal thickness across the substrate.

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