Semiconductor device using fuse/anti-fuse system

Details Semiconductor device using fuse/anti-fuse system Semiconductor device using fuse/anti-fuse system

2007-09-21

2009-11-10

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257SE29131, C257SE29262, C257SE21141

Reexamination Certificate

active

07615813

ABSTRACT:
A first concave portion for the element isolation, a second concave portion for an aligning mark, and a third concave portion for an anti-fuse portion are formed simultaneously within a silicon substrate. After a silicon oxide film is formed on the entire surface, the silicon oxide film positioned within the second and third concave portions is removed. Then, a gate insulating film is formed on the entire surface, followed by forming a polysilicon film on the gate insulating film. Further, these polysilicon film and gate insulating film are selectively removed to form a gate electrode above an element region, an aligning mark portion in the second concave portion, and a gate electrode for an anti-fuse portion on the bottom surface of the third concave portion.

REFERENCES:
patent: 4116720 (1978-09-01), Vinson
patent: 4194283 (1980-03-01), Hoffmann
patent: 4547791 (1985-10-01), Roger et al.
patent: 5065273 (1991-11-01), Rajeevakumar
patent: 5208177 (1993-05-01), Lee
patent: 5282158 (1994-01-01), Lee
patent: 5331196 (1994-07-01), Lowrey et al.
patent: 5498895 (1996-03-01), Chen
patent: 5629227 (1997-05-01), Chen
patent: 5811336 (1998-09-01), Kasai
patent: 5811858 (1998-09-01), Ohkubo
patent: 5866937 (1999-02-01), McCollum
patent: 5903042 (1999-05-01), Kwok et al.
patent: 5913138 (1999-06-01), Yamaoka et al.
patent: 5920778 (1999-07-01), Rosner et al.
patent: 5926698 (1999-07-01), Ohkubo
patent: 5981995 (1999-11-01), Selcuk
patent: 6043543 (2000-03-01), Klose
patent: 6087214 (2000-07-01), Cunningham
patent: 6130469 (2000-10-01), Bracchitta et al.
patent: 6133586 (2000-10-01), Ohkubo
patent: 6215197 (2001-04-01), Iwamatsu
patent: 6335228 (2002-01-01), Fuller et al.
patent: 6376348 (2002-04-01), Schrems
patent: 6388305 (2002-05-01), Bertin et al.
patent: 6787878 (2004-09-01), Nagai et al.
patent: 6815751 (2004-11-01), Brown et al.
patent: 6974987 (2005-12-01), Ogawa et al.
patent: 6995415 (2006-02-01), Ogawa et al.
patent: 7019348 (2006-03-01), Tu
patent: 7247901 (2007-07-01), Chou
patent: 7326619 (2008-02-01), Park et al.
patent: 2001/0003034 (2001-06-01), Furukawa et al.
patent: 2001/0031535 (2001-10-01), Agnello et al.
patent: 2001/0055839 (2001-12-01), Lehr et al.
patent: 2002/0030234 (2002-03-01), Ohuchi et al.
patent: 2002/0105051 (2002-08-01), Bertin et al.
patent: 2005/0189609 (2005-09-01), Tu
patent: 2006/0017115 (2006-01-01), Tu et al.
patent: 63-237542 (1988-10-01), None
patent: 4-234158 (1992-08-01), None
patent: 5-021724 (1993-01-01), None
patent: 8-241929 (1996-09-01), None
patent: 9-8154 (1997-01-01), None
patent: 9-266258 (1997-10-01), None
patent: 11-67894 (1999-03-01), None
patent: 11-97559 (1999-04-01), None
patent: 11-163285 (1999-06-01), None
patent: 11-163346 (1999-06-01), None
patent: 11-204759 (1999-07-01), None
patent: 11-284137 (1999-10-01), None
patent: 11-330381 (1999-11-01), None
patent: 11-345888 (1999-12-01), None
patent: 2000-36545 (2000-02-01), None
patent: 2000-503167 (2000-03-01), None
patent: 97/20337 (1997-06-01), None
Wolf, Stanley, “Silicon Processing for the VLSI Era: vol. 2 Process Integration,” Lattice Press, pp. 332-336.
JP Office Action dtd Oct. 7, 2008, JP Appln. 2001-040620.
JP Office Action dtd Feb. 3, 2009, JP Appln. 2001-040620.

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