System and method for providing a deep connection to a...

Details System and method for providing a deep connection to a... System and method for providing a deep connection to a...

2007-07-26

2009-06-16

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S542000, C257SE21545, C257SE21546

Reexamination Certificate

active

07547618

ABSTRACT:
A system and method is disclosed for providing a deep connection to a substrate or buried layer of a semiconductor device. Three shallow trenches are etched halfway through a layer of epitaxial silicon that is located on a substrate. A second doped layer is created in the epitaxial silicon layer at the bottom of the central shallow trench. First and third doped layers are created in the epitaxial silicon layer adjacent to the central shallow trench. An oxide layer is then deposited to fill the three trenches. The second doped layer is diffused vertically down to the substrate. The first and third doped layers are diffused vertically down to the second doped layer. Lateral diffusion of the first and third doped layers is constrained by the oxide layer in the three trenches.

REFERENCES:
patent: 4140558 (1979-02-01), Murphy et al.
patent: 4965652 (1990-10-01), Magdo et al.
patent: 5780340 (1998-07-01), Gardner et al.
patent: 5981998 (1999-11-01), Frisina et al.
patent: 6534828 (2003-03-01), Kocon
patent: 6958518 (2005-10-01), Wylie
patent: 6987052 (2006-01-01), Baiocchi et al.
patent: 7041561 (2006-05-01), Baiocchi et al.
patent: 7262110 (2007-08-01), Jin
patent: 7262111 (2007-08-01), Foote
patent: 2003/0094624 (2003-05-01), Hshieh et al.
patent: 2004/0113203 (2004-06-01), Hshieh et al.
patent: 2005/0221563 (2005-10-01), Baiocchi et al.
patent: 2007/0080399 (2007-04-01), Takaishi

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