Showerhead assembly and ALD methods

Coating apparatus – Gas or vapor deposition

Reexamination Certificate

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C156S345100

Reexamination Certificate

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07601223

ABSTRACT:
An apparatus for depositing thin films onto a substrate is provided. The apparatus includes a gas exchange plate that is positioned within a reaction chamber having a platform. The gas exchange plate may be positioned above or below the platform and comprises a first plurality of passages and a second plurality of passages machined therein. The first plurality of passages is in fluid communication with a first reactant source and a purge gas source. Similarly, the second plurality of passages is in fluid communication with a second reactant source and a purge gas source. The first and the second plurality of passages are fluidly connected to first and second plurality of apertures that open to the reaction chamber. Gases are removed from the reaction space through third plurality of apertures within the gas exchange plate that are in fluid communication with exhaust space. Methods of atomic layer deposition (ALD) include exhausting gas through the plane of a gas injection system, pressure fluctuation using multiple pulse precursor and purge steps, and use of booster inert gas flows.

REFERENCES:
patent: 3854443 (1974-12-01), Baerg
patent: 4358686 (1982-11-01), Kinoshita
patent: 4522149 (1985-06-01), Garbis et al.
patent: 4523985 (1985-06-01), Dimock
patent: 4579618 (1986-04-01), Celestino
patent: 4582720 (1986-04-01), Yamazaki
patent: 4590042 (1986-05-01), Drage
patent: 4595484 (1986-06-01), Giammarco et al.
patent: 4597618 (1986-07-01), Reimer
patent: 4694779 (1987-09-01), Hammond et al.
patent: 4738748 (1988-04-01), Kisa
patent: 4798165 (1989-01-01), deBoer et al.
patent: 4851095 (1989-07-01), Scobey et al.
patent: 5010842 (1991-04-01), Oda et al.
patent: 5102523 (1992-04-01), Beisswenger et al.
patent: 5356673 (1994-10-01), Schmitt et al.
patent: 5370709 (1994-12-01), Kobayashi
patent: 5422139 (1995-06-01), Fischer
patent: 5453124 (1995-09-01), Moslehi et al.
patent: 5500256 (1996-03-01), Watabe
patent: 5542559 (1996-08-01), Kawakami et al.
patent: 5551982 (1996-09-01), Anderson et al.
patent: 5595606 (1997-01-01), Fujikawa et al.
patent: 5622606 (1997-04-01), Kugler et al.
patent: 5624498 (1997-04-01), Lee et al.
patent: 5656123 (1997-08-01), Salimian et al.
patent: 5669975 (1997-09-01), Ashtiani
patent: 5674320 (1997-10-01), Kordina et al.
patent: 5683537 (1997-11-01), Ishii
patent: 5685914 (1997-11-01), Hills et al.
patent: 5711811 (1998-01-01), Suntola et al.
patent: 5716453 (1998-02-01), Chen
patent: 5766364 (1998-06-01), Ishida et al.
patent: 5781693 (1998-07-01), Ballance et al.
patent: 5792261 (1998-08-01), Hama et al.
patent: 5811022 (1998-09-01), Savas et al.
patent: 5884009 (1999-03-01), Okase
patent: 5888907 (1999-03-01), Tomoyasu et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5938333 (1999-08-01), Kearney
patent: 5983906 (1999-11-01), Zhao et al.
patent: 6025013 (2000-02-01), Heming et al.
patent: 6042652 (2000-03-01), Hyun et al.
patent: 6097005 (2000-08-01), Akimoto
patent: 6111225 (2000-08-01), Ohkase et al.
patent: 6148761 (2000-11-01), Majewski et al.
patent: 6183565 (2001-02-01), Granneman et al.
patent: 6184158 (2001-02-01), Shufflebotham et al.
patent: 6200389 (2001-03-01), Miller et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6270571 (2001-08-01), Iwasaki et al.
patent: 6291800 (2001-09-01), Shirakawa et al.
patent: 6305314 (2001-10-01), Sneh et al.
patent: 6333019 (2001-12-01), Coppens
patent: 6342277 (2002-01-01), Sherman
patent: 6364949 (2002-04-01), Or et al.
patent: 6368987 (2002-04-01), Kopacz et al.
patent: 6399922 (2002-06-01), Okase et al.
patent: 6416822 (2002-07-01), Chiang et al.
patent: 6428859 (2002-08-01), Chiang et al.
patent: 6435428 (2002-08-01), Kim et al.
patent: 6446573 (2002-09-01), Hirayama et al.
patent: 6478872 (2002-11-01), Chae et al.
patent: 6502530 (2003-01-01), Turlot et al.
patent: 6537418 (2003-03-01), Muller et al.
patent: 6736408 (2004-05-01), Olgado et al.
patent: 6890386 (2005-05-01), DeDontney et al.
patent: 6921437 (2005-07-01), DeDontney et al.
patent: 7273526 (2007-09-01), Shinriki et al.
patent: 2002/0066411 (2002-06-01), Chiang et al.
patent: 2002/0068458 (2002-06-01), Chiang et al.
patent: 2002/0092471 (2002-07-01), Kang et al.
patent: 2002/0197402 (2002-12-01), Chiang et al.
patent: 2003/0143328 (2003-07-01), Chen et al.
patent: 2004/0050325 (2004-03-01), Samoilov et al.
patent: 2004/0050326 (2004-03-01), Thilderkvist et al.
patent: 2004/0142558 (2004-07-01), Granneman
patent: 2004/0216665 (2004-11-01), Soininen et al.
patent: 2004/0221809 (2004-11-01), Ohmi et al.
patent: 2005/0208217 (2005-09-01), Shinriki et al.
patent: 0 015 390 (1985-09-01), None
patent: 0 550 058 (1993-07-01), None
patent: 61-101020 (1986-05-01), None
patent: 61-263118 (1986-11-01), None
patent: 61-294812 (1986-12-01), None
patent: 62-021237 (1987-01-01), None
patent: 62-080271 (1987-04-01), None
patent: 63-136532 (1988-06-01), None
patent: 02-030119 (1990-01-01), None
patent: 02-034915 (1990-02-01), None
patent: 04-078130 (1992-03-01), None
patent: 04075328 (1992-03-01), None
patent: 09129555 (1997-05-01), None
patent: 11121381 (1999-04-01), None
patent: 2002121677 (2002-04-01), None
patent: 2003060186 (2003-02-01), None
patent: 2004292872 (2004-10-01), None
patent: WO 96/17106 (1996-06-01), None
patent: WO 96/17969 (1996-06-01), None
patent: WO 00/12964 (2000-03-01), None
patent: WO 00/63957 (2000-10-01), None
patent: WO 00/79019 (2000-12-01), None
patent: WO 00/79576 (2000-12-01), None
patent: WO 01/00680 (2001-01-01), None
patent: WO 01/17692 (2001-03-01), None
patent: WO 02/08488 (2002-01-01), None
patent: WO 02/26192 (2002-04-01), None
patent: WO 03/023835 (2003-03-01), None
de Keijser et al., “Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen,”Appl. Phys. Lett.,vol. 58, No. 11, Mar. 18, 1991, pp. 1187-1189.
Imai et al., “Atomic layer epitaxy of Si using atomic H,”Thin Solid Films,vol. 225, (1993), pp. 168-172.
Koleske et al., “Atomic layer epitaxy of Si of Ge(100) using Si2Cl6and atomic hydrogen,”Appl. Phys. Lett., vol. 64, No. 7, Feb. 14, 1994, pp. 884-886.
Mahajan et al., “Si atomic layer epitaxy based on Si2H6and remote He plasma bombardment,”Thin Solid Films, vol. 225, (1993), pp. 177-182.
Singh et al., “Measurement of neutral and ion compositon, neutral temperature, and electron energy distribution function in a CF4inductively coupled plasma,”J. Vac. Sci Technol. A., vol. 19, No. 3, May/Jun. 2001, pp. 718-729.
Singh et al., “Measurements of the electron energy distribution function in molecular gases in a shielded inductively coupled plasma,”Journal of Applied Physics, vol. 88, No. 7, Oct. 1, 2000, pp. 3889-3898.
Sugahara et al., “Atomic hydrogen-assisted ALE of germanium,”Applied Surface Science, vol. 90, (1995), pp. 349-356.
Sugahara et al. “Atomic layer epitaxy of germanium,”Appliced Surface Science, vol. 82/83, (1994), pp. 380-386.
Sugahara et al., “Modeling of germanium atomic-layer-epitaxy,”Applied Surface Science, vol. 122, (1997), pp. 176-186.

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