Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-02-21
2009-08-25
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185290, C365S185330, C365S191000, C365S196000, C365S230030, C365S233500
Reexamination Certificate
active
07580284
ABSTRACT:
A flash memory device is programmed by loading first data into a page buffer of a first mat. Second data is loaded into a page buffer of a second mat while programming the first data in a first memory block of the first mat.
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Notice to File a Response/Amendment to the Examination Report for Korean Patent Application No. 10-2004-0109827 mailed on Apr. 12, 2006.
Byeon Dae-Seok
Park Jin-Sung
Myers Bigel Sibley & Sajovec P.A.
Pham Ly D
Samsung Electronics Co,. Ltd.
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