Nitride semiconductor heterostructures and related methods

Details Nitride semiconductor heterostructures and related methods Nitride semiconductor heterostructures and related methods

2006-08-14

2009-12-29

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S046000, C438S022000, C117S088000, C117S104000, C257SE21085

Reexamination Certificate

active

07638346

ABSTRACT:
Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106cm−2.

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