Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-19
2009-02-03
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S710000
Reexamination Certificate
active
07485570
ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.
REFERENCES:
patent: 6583048 (2003-06-01), Vincent et al.
patent: 6593655 (2003-07-01), Loboda et al.
patent: 6649531 (2003-11-01), Cote et al.
patent: 6664641 (2003-12-01), Ohsaki et al.
patent: 6667553 (2003-12-01), Cerny et al.
patent: 6737746 (2004-05-01), Matsuura
patent: 6852651 (2005-02-01), Shioya et al.
patent: 6927178 (2005-08-01), Kim et al.
patent: 6949830 (2005-09-01), Owada et al.
patent: 7030041 (2006-04-01), Li et al.
patent: 7057288 (2006-06-01), Yuasa
patent: 7208405 (2007-04-01), Owada et al.
patent: 2003/0100190 (2003-05-01), Cote et al.
patent: 2003/0134505 (2003-07-01), Dalton et al.
patent: 2004/0155340 (2004-08-01), Owada et al.
patent: 2004/0214446 (2004-10-01), Kim et al.
patent: 2005/0202685 (2005-09-01), Huang et al.
patent: 2005/0242440 (2005-11-01), Owada et al.
patent: 2005/0287790 (2005-12-01), Owada et al.
patent: 2006/0189162 (2006-08-01), Huang et al.
patent: 2006/0204673 (2006-09-01), Takayasu et al.
patent: 2007/0173054 (2007-07-01), Owada et al.
patent: 2000-049157 (2000-02-01), None
patent: 2001-196367 (2001-07-01), None
patent: 2002-110670 (2002-04-01), None
patent: 2002-252228 (2002-09-01), None
patent: 2002-256434 (2002-09-01), None
patent: 2002-270689 (2002-09-01), None
patent: 2002-270689 (2002-09-01), None
patent: 2003-124307 (2003-04-01), None
patent: 2003-218109 (2003-07-01), None
patent: 2004-023031 (2004-01-01), None
patent: 2004172590 (2004-06-01), None
Japanese Office Action dated Dec. 26, 2006 issued in Corresponding Japanese Application No. 2003-360192.
Office Action dated May 8, 2007 issued in corresponding Application No. 2003-360192.
Citation 6 Aurora 2.7 Process pp. 40-44 and 120.
Citation 7 Black Diamond pp. 88-90 and 140.
Citation 8 Low-K pp. 35-40 and 120.
Japanese Office Action dated Apr. 26, 2007 issued in Corresponding Japanese Application No. 2003-360192.
Fukuyama Shun-ichi
Inoue Kengo
Owada Tamotsu
Shimizu Atsuo
Watatani Hirofumi
Fujitsu Limited
Menz Laura M
Westerman, Hattori, Daniels & Adrian , LLP.
LandOfFree
Silicon oxycarbide, growth method of silicon oxycarbide... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon oxycarbide, growth method of silicon oxycarbide..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon oxycarbide, growth method of silicon oxycarbide... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4064479