Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-07
2009-12-01
Gurley, Lynne A. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S316000, C257SE29304
Reexamination Certificate
active
07626225
ABSTRACT:
A semiconductor device including a nonvolatile memory element, the nonvolatile memory element, including:a first region, a second region formed adjacent to the first region, and a third region formed adjacent to the second region;the nonvolatile memory element further including a semiconductor layer, a separating insulation layer which is formed on the semiconductor layer and which demarcates a forming region of the nonvolatile memory element,a first diffusion layer which is formed on the semiconductor layer of the first region,a first source region and a first drain region formed on the first diffusion layer,a second diffusion layer which is separated from the first diffusion layer and which is formed on a periphery of the first diffusion layer and on the semiconductor layer of the second region,a second source region and a second drain region formed on the second diffusion layer,a third diffusion layer formed on the semiconductor layer of the third region,a first insulation layer formed above the semiconductor layer of the forming region of the nonvolatile memory element, anda first conductive layer formed above the first insulation layer.
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Inoue Susumu
Maruo Yutaka
Gurley Lynne A.
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
Webb Vernon P
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