Flash memory device capable of reduced programming time

Details Flash memory device capable of reduced programming time Flash memory device capable of reduced programming time

2008-03-31

2009-02-17

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185280

Reexamination Certificate

active

07492642

ABSTRACT:
A flash memory device and related method of operation are provided. The device generally comprises a word line voltage generator circuit configured to generate a word line voltage based on incremental step pulse programming; and a word line voltage controller circuit that controls the word line voltage generator circuit so that either the unit program time or the increment size of the word line voltage is varied according to the number of program data bits among the set of input data bits that the device will store in memory cells.

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