Semiconductor device and manufacturing method of...

Details Semiconductor device and manufacturing method of... Semiconductor device and manufacturing method of...

2005-11-15

2009-02-17

Nguyen, Dao H. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S358000, C257S360000, C257SE21619, C257SE29176, C438S224000, C438S309000

Reexamination Certificate

active

07492011

ABSTRACT:
To present a semiconductor device mounting ESD protective device appropriately applicable to transistors mutually different in dielectric strength, and its manufacturing method. The semiconductor device comprises a first ESD protective circuit1A including a first transistor3and a first ballast resistance4, and a second ESD protective circuit1B including a second transistor5and a second ballast resistance6. The impurity concentration of the second diffusion region forming the first ballast resistance4is set lower than the impurity concentration of the fourth diffusion region for forming the second ballast resistance6.

REFERENCES:
patent: 5874763 (1999-02-01), Ham
patent: 6897536 (2005-05-01), Nomura et al.
patent: 2006/0001097 (2006-01-01), Nomura et al.
patent: 2002-134630 (2002-05-01), None
patent: 2004-15003 (2004-01-01), None

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