Insulating film and electronic device

Details Insulating film and electronic device Insulating film and electronic device

2008-06-09

2009-12-22

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S411000, C257SE21625

Reexamination Certificate

active

07635900

ABSTRACT:
An electronic device including a semiconductor layer having silicon as a major component; and a dielectric film epitaxially grown directly on a major surface of the semiconductor layer, wherein the dielectric film consists of a dielectric material having a Ruddlesden-Popper type structure, the Ruddlesden-Popper type structure is expressed by a chemical formula An+1BnO3n+1, the element A including at least one selected from a group consisting of Ba, Sr, Ca and Mg, a percentage of Mg content in the element A is not larger than 10%, and the element B includes at least one selected from a group consisting of Ti, Zr and Hf.

REFERENCES:
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patent: 2002-100767 (2002-04-01), None
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patent: 2004-511909 (2004-04-01), None
patent: WO 02/31875 (2002-04-01), None
J. H. Haeni, et al., “Epitaxial Growth of the First Five Members of the Srn+1TinO3n+1 Ruddlesden-Popper Homologous Series” Applied Physics Letters, vol. 78, No. 21, May 21, 2001, pp. 3292-3294.
R.A. McKee, et al., “Physical Structure and Inversion Charge at a Semiconductor Interface With a Crystalline Oxide”, Science, vol. 293, Jul. 20, 2001, pp. 468-471.

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