Semiconductor device having a schottky source/drain transistor

Details Semiconductor device having a schottky source/drain transistor Semiconductor device having a schottky source/drain transistor

2007-06-11

2009-02-10

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S164000, C438S197000, C438S299000

Reexamination Certificate

active

07488631

ABSTRACT:
A semiconductor device comprises an island shaped channel layer formed on a substrate, the channel later being composed of a semiconductor material, a gate insulation film formed on the channel layer, a gate electrode formed on the gate insulation film, an insulation film formed on both side faces opposite to one direction of the channel layer, a source electrode and a drain electrode made of a metal material and formed on a side face of the insulation layer.

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Kedzierski, et al., “Complementary silicide source/drain thin-body MOSFETs for the 20nm gate length regime,” IEDM Technical Digest, pp. 57-60 (2000).
Connelly, et al., “A New Route to Zero-Barrier Schottky Source/Drain CMOS,” Silicon Nano-technology, pp. 122-123 (2003).

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