Method of fabricating semiconductor by nitrogen doping of...

Details Method of fabricating semiconductor by nitrogen doping of... Method of fabricating semiconductor by nitrogen doping of...

2005-04-04

2009-12-29

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S485000, C438S791000

Reexamination Certificate

active

07638413

ABSTRACT:
A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or to augment the breakdown voltage of the film. Nitrogen gas, N2, is activated or ionized in a reactor before it is deposited on the substrate.

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patent: 6166428 (2000-12-01), Mehta et al.
patent: 2004/0106278 (2004-06-01), Xu et al.

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