Electrically erasable programmable read only memory (EEPROM)...

Details Electrically erasable programmable read only memory (EEPROM)... Electrically erasable programmable read only memory (EEPROM)...

2006-10-17

2009-12-15

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S320000, C257SE29300

Reexamination Certificate

active

07633115

ABSTRACT:
Semiconductor structures are adapted to form an electrically erasable programmable read only memory (EEPROM) cell having a long retention life, and/or a reduced programming voltage, and/or a reduced semiconductor real estate, and/or a reduced number of semiconductor fabrication steps.

REFERENCES:
patent: 4598460 (1986-07-01), Owens et al.
patent: 4646425 (1987-03-01), Owens et al.
patent: 5929495 (1999-07-01), Dennison et al.
patent: 6576950 (2003-06-01), Cappelletti et al.
patent: 7405442 (2008-07-01), Chen et al.
patent: 7452771 (2008-11-01), Ito et al.
patent: 7463517 (2008-12-01), Shukuri et al.

Affiliated with

Also associated with

Rating

Electrically erasable programmable read only memory (EEPROM)... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically erasable programmable read only memory (EEPROM)..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically erasable programmable read only memory (EEPROM)... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4058920