Hybrid crystal orientation CMOS structure for adaptive well...

Details Hybrid crystal orientation CMOS structure for adaptive well... Hybrid crystal orientation CMOS structure for adaptive well...

Filed on

2007-09-24

Date issued

2009-12-08

Examiner

Wojciechowicz, Edward (Department: 2895)

Patent Class

Semiconductor device manufacturing: process

SubClass

Formation of semiconductive active region on any substrate

Other Related Categories

C438S153000, C438S155000, C438S224000, C438S226000, C438S424000, C438S700000, C257S347000

Type

Reexamination Certificate

Status

active

Patent number

07629233

Description

ABSTRACT:
The present invention provides a semiconducting structure including a substrate having an SOI region and a bulk-Si region, wherein the SOI region and the bulk-Si region have a same or differing crystallographic orientation; an isolation region separating the SOI region from the bulk-Si region; and at least one first device located in the SOI region and at least one second device located in the bulk-Si region. The SOI region has an silicon layer atop an insulating layer. The bulk-Si region further comprises a well region underlying the second device and a contact to the well region, wherein the contact stabilizes floating body effects. The well contact is also used to control the threshold voltages of the FETs in the bulk-Si region to optimized the power and performance of circuits built from the combination of the SOI and bulk-Si region FETs.

REFERENCES:
patent: 5384473 (1995-01-01), Yoshikawa et al.
patent: 5894152 (1999-04-01), Jaso et al.
patent: 5985708 (1999-11-01), Nakagawa et al.
patent: 6337253 (2002-01-01), Davari et al.
patent: 2002/0115244 (2002-08-01), Park et al.
patent: 2003/0151112 (2003-08-01), Yamada et al.
patent: 2004/0222436 (2004-11-01), Joseph et al.
patent: 2004/0256700 (2004-12-01), Doris et al.
patent: 2005/0073061 (2005-04-01), Lee
patent: 2005/0202600 (2005-09-01), Yamashita
patent: WO2004114400 (2004-12-01), None
M. Yang, et al., “High Performance CMOS SOI Devices on Hybrid Crystal Oriented Substrates”, IEDM 2003.
J. Tschanz, et al., “Adaptive Body Bias For Reducing Implants of Die-toDie and Within-Die Parameter Variations on Microprocessor Frequency and Leakage” IEEE Journal of Solid-State Curcuits, vol. 37, No. 11, pp. 139-1402, Nov. 2002.

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