Semiconductor flash device

Details Semiconductor flash device Semiconductor flash device

2005-04-20

2009-10-13

Garber, Charles D. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21300

Reexamination Certificate

active

07602006

ABSTRACT:
A flash memory device includes a floating gate made of a multi-layered structure. The floating gate includes a hetero-pn junction which serves as a quantum well to store charge in the floating gate, thus increasing the efficiency of the device, allowing the device to be operable using lower voltages and increasing the miniaturization of the device. The floating gate may be used in n-type and p-type devices, including n-type and p-type fin-FET devices. The stored charge may be electrons or holes.

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