Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-27
2009-08-11
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S668000, C257S774000, C257S773000, C257SE21597, C347S054000
Reexamination Certificate
active
07572730
ABSTRACT:
The method of manufacturing a wiring substrate includes the steps of: filling conductive material into a through hole and a non-through hole of a substrate; removing the conductive material filled into the through hole; and removing at least a portion of a rear side of the substrate which is opposite to a front side of the substrate at which the non-through hole is open, in such a manner that the non-through hole is open at the rear side of the substrate.
REFERENCES:
patent: 6332669 (2001-12-01), Kato et al.
patent: 2007/0063206 (2007-03-01), Maeda
patent: 2007/0146440 (2007-06-01), Kojima et al.
patent: 7-231158 (1995-08-01), None
patent: 8-230195 (1996-09-01), None
Birch & Stewart Kolasch & Birch, LLP
Fujifilm Corporation
Thai Luan C
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