Method for the production of a semiconductor component...

Details Method for the production of a semiconductor component... Method for the production of a semiconductor component...

2007-05-07

2009-11-17

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C438S167000, C438S172000, C257SE29246, C257S194000

Reexamination Certificate

active

07618851

ABSTRACT:
The production of a microelectronic component, particularly a pHEMT, having a T-shaped gate electrode in a double-recess structure uses a production method for self-adjusting alignment of the two recesses of the double-recess structure and of the gate foot of the gate electrode.

REFERENCES:
patent: 5358885 (1994-10-01), Oku et al.
patent: 5556797 (1996-09-01), Chi et al.
patent: 5641977 (1997-06-01), Kanamori
patent: 5796132 (1998-08-01), Nakano et al.
patent: 6087256 (2000-07-01), Wada
patent: 6180968 (2001-01-01), Kasahara et al.
patent: 2004/0063303 (2004-04-01), Behammer
patent: 2004/0082158 (2004-04-01), Whelan et al.
European Search Report in German.

Affiliated with

Also associated with

Rating

Method for the production of a semiconductor component... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the production of a semiconductor component..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the production of a semiconductor component... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4055909