Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-07-01
2009-06-02
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21271, C257SE21576, C438S783000
Reexamination Certificate
active
07541296
ABSTRACT:
Disclosed is a method for effectively forming a Low-k insulating film. The method comprises the steps of: spin-coating on an underlying layer a precursor solution formed by dispersing Low-k materials in a solvent to form a coating film, subjecting the coating film to a baking treatment under heating for about several minutes at a temperature near a boiling point of the solvent, forming, on the coating film after the baking treatment, an SiC barrier film using a CVD method, and subjecting the coating film to a hydrogen plasma treatment through the barrier film continuously using the same CVD apparatus as used in forming the barrier film without taking out the coating film from the CVD apparatus.
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Partial Translation of Japanese Office Action dated Jun. 10, 2008, issued in corresponding Japanese Application No. 2005-032446.
Fukuyama Shun-ichi
Nakata Yoshihiro
Owada Tamotsu
Ozaki Shirou
Watatani Hirofumi
Fujitsu Microelectronics Limited
Fujitsu Patent Center
Sarkar Asok K
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