Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

Filed on

2004-06-18

Date issued

2009-08-04

Examiner

Jackson, Jerome (Department: 2815)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Non-single crystal, or recrystallized, semiconductor...

SubSubClass

Amorphous semiconductor material

Other Related Categories

C257S072000, C257SE29278

Type

Reexamination Certificate

Status

active

Patent number

07569854

Description

ABSTRACT:
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.

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